Samsung M378B5673FH0-CH9 2GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

更快的读取速度，GB/s

14.4 11.1

测试中的平均数值
更快的写入速度，GB/s

9.5 6.1

测试中的平均数值

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

需要考虑的原因
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

14.4 11.1
写入速度，GB/s

9.5 6.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 1254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9905734-102.A00G 32GB

Kingston 9905734-102.A00G 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB