Samsung M378B5673FH0-CH9 2GB vs Corsair CMW32GX4M4K3733C17 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Corsair CMW32GX4M4K3733C17 8GB

需要考虑的原因
Corsair CMW32GX4M4K3733C17 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 35

左右 -84% 更低的延时
更快的读取速度，GB/s

21 14.4

测试中的平均数值
更快的写入速度，GB/s

18.6 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Corsair CMW32GX4M4K3733C17 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 19
读取速度，GB/s

14.4 21.0
写入速度，GB/s

9.5 18.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3993

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW32GX4M4K3733C17 8GB

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Corsair CMV16GX4M1A2666C18 16GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston KHX3333C16D4/16GX 16GB

Kingston KHX3333C16D4/16GX 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Corsair CMK32GX4M2Z3200C16 16GB

Corsair CMK32GX4M2Z3200C16 16GB

Samsung M393B4G70EMB-CK0 32GB

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Gloway International Co. Ltd. TYA4U3000E16081C 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

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