Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BL8G32C16U4B.M8FE1 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Crucial Technology BL8G32C16U4B.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

18.3 14.4

测试中的平均数值
更快的写入速度，GB/s

14.8 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

14.4 18.3
写入速度，GB/s

9.5 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 3442

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965600-023.A00G 16GB

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Corsair CML8GX3M2A1866C9 4GB

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Kingston 99U5701-003.A00G 16GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

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Kingston ACR16D3LS1NGG/4G 4GB

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Corsair CMW64GX4M4D3600C18 16GB

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G Skill Intl F4-3333C16-16GTZB 16GB

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Transcend Information JM3200HSE-32G 32GB

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G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-2800C16-8GRK 8GB

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A-DATA Technology AD5U48008G-B 8GB

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Corsair CM4B16G1J2400A16K2-O 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB