Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-3400C16-16GVR 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

G Skill Intl F4-3400C16-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3400C16-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 -52% 更低的延时
更快的读取速度，GB/s

17.4 14.4

测试中的平均数值
更快的写入速度，GB/s

13.5 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3400C16-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 23
读取速度，GB/s

14.4 17.4
写入速度，GB/s

9.5 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3195

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Vulcan-1600 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4SFS8213.C8FBD1 8GB

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Samsung M378B5673FH0-CH9 2GB

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G Skill Intl F4-3400C16-16GVR 16GB

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Samsung M471B5273CH0-CH9 4GB

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SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMK16GX4M2L3000C15 8GB

Corsair CMK16GX4M2L3000C15 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB