Samsung M378B5673FH0-CH9 2GB vs GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 -25% 更低的延时
更快的读取速度，GB/s

19.1 14.4

测试中的平均数值
更快的写入速度，GB/s

17.0 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 28
读取速度，GB/s

14.4 19.1
写入速度，GB/s

9.5 17.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 3786

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

King Tiger Technology TMKU8G868-240U 8GB

King Tiger Technology TMKU8G868-240U 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMK64GX4M8A2400C14 8GB

Corsair CMK64GX4M8A2400C14 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMK16GX4M4A2666C16 4GB

Corsair CMK16GX4M4A2666C16 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-4400C19-32GTZR 32GB

G Skill Intl F4-4400C19-32GTZR 32GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB