Samsung M378B5673FH0-CH9 2GB vs Kingston 9905700-013.A00G 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Kingston 9905700-013.A00G 8GB

Kingston 9905700-013.A00G 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 47

左右 26% 更低的延时
更快的读取速度，GB/s

14.4 13.9

测试中的平均数值
更快的写入速度，GB/s

9.5 7.3

测试中的平均数值

Kingston 9905700-013.A00G 8GB

需要考虑的原因
Kingston 9905700-013.A00G 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Kingston 9905700-013.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 47
读取速度，GB/s

14.4 13.9
写入速度，GB/s

9.5 7.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 2074

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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G Skill Intl F4-4000C15-8GVK 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston 9905700-013.A00G 8GB

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Peak Electronics 256X64M-67E 2GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3600C19-8GSXF 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston 9905702-400.A00G 8GB

Kingston 9905702-400.A00G 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB