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Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB

Samsung M378B5673FH0-CH9 2GB vs Micron Technology 16ATF4G64AZ-2G6B1 32GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 46
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.7
    测试中的平均数值
Micron Technology 16ATF4G64AZ-2G6B1 32GB 需要考虑的原因
Micron Technology 16ATF4G64AZ-2G6B1 32GB
报告一个错误
  • 更快的写入速度，GB/s
    12.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 46
  • 读取速度，GB/s
    14.4 left arrow 13.7
  • 写入速度，GB/s
    9.5 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2961

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW32GX4M2C3000C15 16GB
Corsair CMW32GX4M2C3000C15 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905625-142.A00G 16GB
Kingston 9905625-142.A00G 16GB
内存RAM
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
Corsair CM4B8G1J2400A16K2-O 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM