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Samsung M378B5673FH0-CH9 2GB
Mushkin 99[2/7/4]200F 8GB

Samsung M378B5673FH0-CH9 2GB vs Mushkin 99[2/7/4]200F 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 13.7
    测试中的平均数值
Mushkin 99[2/7/4]200F 8GB 需要考虑的原因
Mushkin 99[2/7/4]200F 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 -35% 更低的延时
  • 更快的写入速度，GB/s
    10.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Mushkin 99[2/7/4]200F 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 26
  • 读取速度，GB/s
    14.4 left arrow 13.7
  • 写入速度，GB/s
    9.5 left arrow 10.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2740

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Mushkin 99[2/7/4]200F 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Kingston 9905458-017.A01LF 4GB
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内存RAM
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Kingmax Semiconductor KLDD48F-B8KU5 1GB
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G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
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Samsung M391A1G43EB1-CPB 8GB
内存RAM