Samsung M378B5773CH0-CH9 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的读取速度，GB/s

16.9 12.8

测试中的平均数值
更快的写入速度，GB/s

15.2 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

12.8 16.9
写入速度，GB/s

7.4 15.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1770 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M2A2400C16 4GB

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Netac Technology Co Ltd EKBLACK4083016A 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Avant Technology J642GU42J2320NQ 16GB

Avant Technology J642GU42J2320NQ 16GB

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Crucial Technology CT4G4DFS824A.C8FADP 4GB

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