Samsung M378B5773CH0-CH9 2GB vs Corsair CMW16GX4M2C3466C16 8GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

Corsair CMW16GX4M2C3466C16 8GB

需要考虑的原因
Corsair CMW16GX4M2C3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

18.5 12.8

测试中的平均数值
更快的写入速度，GB/s

13.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Corsair CMW16GX4M2C3466C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

12.8 18.5
写入速度，GB/s

7.4 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1770 3444

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M2C3200C14T 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3400C16-16GVR 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston RB26D4U9D8MEH-16 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

Avant Technology J642GU42J5213N4 16GB

Avant Technology J642GU42J5213N4 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

Kingston KHX2666C16D4/4G 4GB

Kingston KHX2666C16D4/4G 4GB