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Samsung M378B5773CH0-CH9 2GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB

Samsung M378B5773CH0-CH9 2GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分
star star star star star
Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异 规格 评论

差异

Samsung M378B5773CH0-CH9 2GB 需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    12.8 left arrow 11.8
    测试中的平均数值
Micron Technology 18ADF2G72PZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 39
    左右 -22% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 32
  • 读取速度，GB/s
    12.8 left arrow 11.8
  • 写入速度，GB/s
    7.4 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1770 left arrow 2585

Samsung M378B5773CH0-CH9 2GB RAM的比较

Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K1KCB1-CRC 8GB
Samsung M471A1K1KCB1-CRC 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston KF3200C20S4/16G 16GB
Kingston KF3200C20S4/16G 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 99U5665-004.A00G 4GB
Kingston 99U5665-004.A00G 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X8GF3000C15K4 8GB
Corsair CM4X8GF3000C15K4 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Roa Logic BV iGame DDR4 8G 3000 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3200C16-8GRS 8GB
G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CM4X8GE3000C15K4 8GB
Corsair CM4X8GE3000C15K4 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM