Samsung M378B5773DH0-CH9 2GB vs A-DATA Technology 11137401 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 40

左右 3% 更低的延时

A-DATA Technology 11137401 8GB

需要考虑的原因
A-DATA Technology 11137401 8GB

报告一个错误

更快的读取速度，GB/s

15.1 11.7

测试中的平均数值
更快的写入速度，GB/s

7.3 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

A-DATA Technology 11137401 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 40
读取速度，GB/s

11.7 15.1
写入速度，GB/s

7.2 7.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 1921

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology CT8G4DFD824A.C16FBD1 8GB

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Essencore Limited IM48GU48N21-FFFHM 8GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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AMD AE34G1601U1 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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V-Color Technology Inc. TL48G26S8KRRGB16 8GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

Kingston 99U5403-492.A00LF 8GB

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Samsung SH5724G4UNC26P2-SC 32GB

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G Skill Intl F4-3600C19-16GSXWB 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Mushkin 99[2/7/4]192F 4GB

Mushkin 99[2/7/4]192F 4GB