Samsung M378B5773DH0-CH9 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

16.9 11.7

测试中的平均数值
更快的写入速度，GB/s

13.4 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

11.7 16.9
写入速度，GB/s

7.2 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3257

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR4 2133 2OZ 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Panram International Corporation W4U2666P-8G 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CM4B16G1J2400A16K2-O 16GB

Corsair CM4B16G1J2400A16K2-O 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB