Samsung M378B5773DH0-CH9 2GB vs Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

18.8 11.7

测试中的平均数值
更快的写入速度，GB/s

15.2 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

11.7 18.8
写入速度，GB/s

7.2 15.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 3666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

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A-DATA Technology DDR2 800G 2GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB