Samsung M378B5773DH0-CH9 2GB vs Crucial Technology CT16G4SFD824A.M16FH 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Crucial Technology CT16G4SFD824A.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的读取速度，GB/s

14.9 11.7

测试中的平均数值
更快的写入速度，GB/s

9.8 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 36
读取速度，GB/s

11.7 14.9
写入速度，GB/s

7.2 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT41GU7BFR8A-PB 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston HP26D4S9D8MJ-16 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston 9905734-061.A00G 32GB

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Crucial Technology CT102464BA160B.M16 8GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB