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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Kingston HP26D4S9D8MJ-16 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Kingston HP26D4S9D8MJ-16 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Kingston HP26D4S9D8MJ-16 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
119
左右 76% 更低的延时
更快的读取速度,GB/s
13.4
1.8
测试中的平均数值
更快的写入速度,GB/s
9.0
2.0
测试中的平均数值
需要考虑的原因
Kingston HP26D4S9D8MJ-16 16GB
报告一个错误
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Kingston HP26D4S9D8MJ-16 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
119
读取速度,GB/s
13.4
1.8
写入速度,GB/s
9.0
2.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2423
447
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Kingston HP26D4S9D8MJ-16 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Elpida EBJ41UF8BDW0-GN-F 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Kingston 9905471-006.A01LF 4GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
报告一个错误
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Bug description
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