Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-2400C17-8GNT 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-2400C17-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GNT 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 51

左右 -55% 更低的延时
更快的读取速度，GB/s

16.3 9.8

测试中的平均数值
更快的写入速度，GB/s

11.7 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-2400C17-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 33
读取速度，GB/s

9.8 16.3
写入速度，GB/s

8.1 11.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMD32GX4M2C3200C14M 16GB

Corsair CMD32GX4M2C3200C14M 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-2400C17-8GSXK 8GB

G Skill Intl F4-2400C17-8GSXK 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB