Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3600C17-8GTRS 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-3600C17-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 39

左右 -77% 更低的延时
更快的读取速度，GB/s

16.9 11.7

测试中的平均数值
更快的写入速度，GB/s

14.4 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C17-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 22
读取速度，GB/s

11.7 16.9
写入速度，GB/s

7.2 14.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3166

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Corsair CMK32GX4M2Z4000C18 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Transcend Information TS1GLH64V4H 8GB

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Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3600C17-8GTRS 8GB

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Corsair CMD32GX4M2C3200C14T 16GB

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Kingston 9965662-004.A00G 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology BL32G32C16U4R.M16FB1 32GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB

Crucial Technology CT51264BA1339.D16F 4GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology 78.D2GFH.4030B 16GB

Apacer Technology 78.D2GFH.4030B 16GB