RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
比较
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的读取速度,GB/s
14.5
11.7
测试中的平均数值
更快的写入速度,GB/s
9.0
7.2
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
11.7
14.5
写入速度,GB/s
7.2
9.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1749
2374
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-2400C14-4GRK 4GB
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5678-029.A00G 8GB
Kingston ACR512X64D3S13C9G 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 99U5665-001.A00G 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KHX2666C13D4/8GX 8GB
Kingston 9965516-112.A00LF 16GB
Corsair CMN32GX4M2Z4600C18 16GB
Samsung M395T2863QZ4-CF76 1GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A1K43CB2-CTD 8GB
Samsung 1600 CL10 Series 8GB
Kingston ACR32D4U2S1ME-8 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Kingston ACR16D3LS1KBG/8G 8GB
Corsair CMK16GX4M2K4500C19 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
报告一个错误
×
Bug description
Source link