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Samsung M378B5773DH0-CH9 2GB
Kingston CBD24D4S7D8ME-16 16GB

Samsung M378B5773DH0-CH9 2GB vs Kingston CBD24D4S7D8ME-16 16GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Kingston CBD24D4S7D8ME-16 16GB

Kingston CBD24D4S7D8ME-16 16GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
Kingston CBD24D4S7D8ME-16 16GB 需要考虑的原因
Kingston CBD24D4S7D8ME-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 39
    左右 -70% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Kingston CBD24D4S7D8ME-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 23
  • 读取速度，GB/s
    11.7 left arrow 15.7
  • 写入速度，GB/s
    7.2 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 2457

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Kingston CBD24D4S7D8ME-16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965433-406.A00LF 8GB
Kingston 9965433-406.A00LF 8GB
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Kingston 9905665-014.A00G 4GB
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Panram International Corporation W4U2400PS-4G 4GB
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内存RAM
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takeMS International AG TMS2GB264D083805EV 2GB
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内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMK32GX4M4Z2933C16 8GB
Corsair CMK32GX4M4Z2933C16 8GB
内存RAM
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
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内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3600C18-32GVK 32GB
内存RAM