RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CK0 2GB

Samsung M378B5773DH0-CH9 2GB vs Samsung M378B5773DH0-CK0 2GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Samsung M378B5773DH0-CK0 2GB

Samsung M378B5773DH0-CK0 2GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 40
    左右 3% 更低的延时
Samsung M378B5773DH0-CK0 2GB 需要考虑的原因
Samsung M378B5773DH0-CK0 2GB
报告一个错误
  • 更快的读取速度，GB/s
    12.6 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CK0 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    39 left arrow 40
  • 读取速度，GB/s
    11.7 left arrow 12.6
  • 写入速度，GB/s
    7.2 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 2205

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773DH0-CK0 2GB RAM的比较

Micron Technology 8ATF1G64AZ-2G3B1 8GB
Corsair CMV16GX4M1A2666C18 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CK0 2GB
Samsung M378B5773DH0-CK0 2GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Essencore Limited KD4AGU880-36A180X 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
King Tiger Technology Tigo-2400MHz-4G 4GB
King Tiger Technology Tigo-2400MHz-4G 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
Corsair CM4X16GC3000C16K4D 16GB
Corsair CM4X16GC3000C16K4D 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM