Samsung M378B5773DH0-CH9 2GB vs SK Hynix HMA42GR7AFR4N-TF 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 50

左右 22% 更低的延时
更快的读取速度，GB/s

11.7 10.6

测试中的平均数值

SK Hynix HMA42GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA42GR7AFR4N-TF 16GB

报告一个错误

更快的写入速度，GB/s

8.2 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMA42GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 50
读取速度，GB/s

11.7 10.6
写入速度，GB/s

7.2 8.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GD3000C15K4 8GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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Kingston 9905403-174.A00LF 2GB

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Kingston HP26D4S9S8MHF-8 8GB

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Kingston 99P5474-014.A00LF 4GB

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Corsair CMD32GX4M4A2400C14 8GB

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Corsair CMK16GX4M2B3333C16 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CMV4GX4M1A2400C16 4GB

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Apacer Technology 76.D305G.D060B 16GB

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Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Samsung M378A1K43EB2-CWE 8GB

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Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB