Micron Technology 16JTF51264HZ-1G6M1 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

报告一个错误

更快的读取速度，GB/s

19.4 12.9

测试中的平均数值
更快的写入速度，GB/s

16.3 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.9 19.4
写入速度，GB/s

9.0 16.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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