Samsung M378B5773DH0-CH9 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 74

左右 47% 更低的延时

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

报告一个错误

更快的读取速度，GB/s

13.6 11.7

测试中的平均数值
更快的写入速度，GB/s

7.7 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 74
读取速度，GB/s

11.7 13.6
写入速度，GB/s

7.2 7.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 1616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32NC8W1-BDAS 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-2400C17-8GNT 8GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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Kingston ACR32D4S2S1ME-8 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingston XWM8G1-MIE 32GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK16GX4M4B3600C18 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston 9905625-098.A00G 16GB

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