RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378T5663QZ3-CF7 2GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Samsung M378T5663QZ3-CF7 2GB vs A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.8
    测试中的平均数值
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB 需要考虑的原因
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 56
    左右 -70% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 33
  • 读取速度，GB/s
    4,387.7 left arrow 15.8
  • 写入速度，GB/s
    1,813.5 left arrow 11.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 2806

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9965662-002.A01G 16GB
Kingston 9965662-002.A01G 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingston 9905700-025.A00G 8GB
Kingston 9905700-025.A00G 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMK16GX4M1Z3600C18 16GB
Corsair CMK16GX4M1Z3600C18 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM