Samsung M378T5663QZ3-CF7 2GB vs Corsair CMR32GX4M4C3466C16 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Corsair CMR32GX4M4C3466C16 8GB

Corsair CMR32GX4M4C3466C16 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 18.9

测试中的平均数值

Corsair CMR32GX4M4C3466C16 8GB

需要考虑的原因
Corsair CMR32GX4M4C3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 56

左右 -93% 更低的延时
更快的写入速度，GB/s

15.9 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Corsair CMR32GX4M4C3466C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 29
读取速度，GB/s

4,387.7 18.9
写入速度，GB/s

1,813.5 15.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMU32GX4M4C3400C16 8GB

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Samsung 1600 CL10 Series 8GB

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Kingston KHX3466C16D4/16GX 16GB

Kingston KHX3466C16D4/16GX 16GB

Kingston KHX2133C11D3/4GX 4GB

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Micron Technology 8ATF1G64HZ-2G3A1 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Transcend Information TS2GSH64V6B 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

Corsair CMD64GX4M4B3333C16 16GB

Corsair CMD64GX4M4B3333C16 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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OCMEMORY OCM3200CL16D-16GBN 8GB