Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology BLS4G4S240FSD.M8FADM 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

需要考虑的原因
Crucial Technology BLS4G4S240FSD.M8FADM 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 56

左右 -124% 更低的延时
更快的写入速度，GB/s

12.5 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 25
读取速度，GB/s

4,387.7 15.4
写入速度，GB/s

1,813.5 12.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Avant Technology J644GU44J2320NQ 32GB

Avant Technology J644GU44J2320NQ 32GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMW16GX4M1Z3200C16 16GB

Corsair CMW16GX4M1Z3200C16 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB