Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology CT8G4DFD8213.M16FA 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值

Crucial Technology CT8G4DFD8213.M16FA 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.M16FA 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 56

左右 -81% 更低的延时
更快的写入速度，GB/s

12.3 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 31
读取速度，GB/s

4,387.7 16.2
写入速度，GB/s

1,813.5 12.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KTC1G-UDIMM 1GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 78.CAGSZ.4070B 8GB

Apacer Technology 78.CAGSZ.4070B 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Apacer Technology 78.CAGNK.4040B 8GB

Apacer Technology 78.CAGNK.4040B 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Transcend Information TS1GLH72V1H 8GB

Transcend Information TS1GLH72V1H 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB