Samsung M378T5663QZ3-CF7 2GB vs Essencore Limited KD48GU880-36A180U 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Essencore Limited KD48GU880-36A180U 8GB

Essencore Limited KD48GU880-36A180U 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

Essencore Limited KD48GU880-36A180U 8GB

需要考虑的原因
Essencore Limited KD48GU880-36A180U 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 56

左右 -133% 更低的延时
更快的写入速度，GB/s

15.2 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Essencore Limited KD48GU880-36A180U 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 24
读取速度，GB/s

4,387.7 16.7
写入速度，GB/s

1,813.5 15.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 3566

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Asgard VMA44UG-MEC1U2AW1 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMT64GX4M4K3600C16 16GB

Corsair CMT64GX4M4K3600C16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information JM2666HSB-8G 8GB

Transcend Information JM2666HSB-8G 8GB