Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3200C14-16GTZDCB 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值

G Skill Intl F4-3200C14-16GTZDCB 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZDCB 16GB

报告一个错误

低于PassMark测试中的延时，ns

21 56

左右 -167% 更低的延时
更快的写入速度，GB/s

13.5 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 21
读取速度，GB/s

4,387.7 19.5
写入速度，GB/s

1,813.5 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB