Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3600C14-16GVK 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 21.7

测试中的平均数值

G Skill Intl F4-3600C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 56

左右 -133% 更低的延时
更快的写入速度，GB/s

19.2 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3600C14-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 24
读取速度，GB/s

4,387.7 21.7
写入速度，GB/s

1,813.5 19.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 4349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3200C14-16GFX 16GB

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G Skill Intl F4-3600C17-8GTZSW 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB