Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-4400C19-8GTZKK 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值

G Skill Intl F4-4400C19-8GTZKK 8GB

需要考虑的原因
G Skill Intl F4-4400C19-8GTZKK 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

16.2 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-4400C19-8GTZKK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,387.7 18.4
写入速度，GB/s

1,813.5 16.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMY16GX3M4A2133C8 4GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Corsair CM4X8GD3600C18K2D 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 9905403-156.A00LF 2GB

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Kingston MSI24D4U7S8MB-8 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Crucial Technology BLS8G4D240FSA.16FAD 8GB

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Samsung M471A5143SB1-CRC 4GB

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V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

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Kingston 99U5584-017.A00LF 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Kingston 9965525-155.A00LF 8GB

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

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Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB