Samsung M378T5663QZ3-CF7 2GB vs Mushkin MRX4U300GJJM16G 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值

Mushkin MRX4U300GJJM16G 16GB

需要考虑的原因
Mushkin MRX4U300GJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 56

左右 -100% 更低的延时
更快的写入速度，GB/s

16.8 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Mushkin MRX4U300GJJM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 28
读取速度，GB/s

4,387.7 19.7
写入速度，GB/s

1,813.5 16.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 3927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

Kingston 99U5474-037.A00LF 4GB

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA82GU6JJR8N-VK 16GB

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Kingston 9905624-007.A00G 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

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Patriot Memory (PDP Systems) PSD48G26662 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Avant Technology W641GU42J9266NB 8GB