Samsung M378T5663QZ3-CF7 2GB vs Samsung M393A2G40EB1-CRC 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

Samsung M393A2G40EB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40EB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

55 56

左右 -2% 更低的延时
更快的读取速度，GB/s

9.3 4

测试中的平均数值
更快的写入速度，GB/s

7.4 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Samsung M393A2G40EB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 55
读取速度，GB/s

4,387.7 9.3
写入速度，GB/s

1,813.5 7.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 2078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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AMD AE34G1601U1 4GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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KingSpec KingSpec 16GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Kingston 9965600-012.A02G 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Corsair CMW128GX4M8C3000C16 16GB

Corsair CMW128GX4M8C3000C16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905702-020.A00G 8GB

Kingston 9905702-020.A00G 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB