Samsung M378T5663QZ3-CF7 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 18.1

测试中的平均数值

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 56

左右 -143% 更低的延时
更快的写入速度，GB/s

15.0 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 23
读取速度，GB/s

4,387.7 18.1
写入速度，GB/s

1,813.5 15.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Kingston HP32D4U8D8HC-16X 16GB

Kingston HP32D4U8D8HC-16X 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston HP26D4S9S8ME-8 8GB

Kingston HP26D4S9S8ME-8 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB