Samsung M378T5663QZ3-CF7 2GB vs SK Hynix HMA451U7AFR8N-TF 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.2

测试中的平均数值

SK Hynix HMA451U7AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 56

左右 -93% 更低的延时
更快的写入速度，GB/s

8.9 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

SK Hynix HMA451U7AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 29
读取速度，GB/s

4,387.7 13.2
写入速度，GB/s

1,813.5 8.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2284

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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AMD R748G2400U2S-UO 8GB

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Kingston 9905678-110.A00G 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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Kingston XG9XKG-MIE 16GB

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Kingston KP223C-ELD 2GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M378B1G73EB0-YK0 8GB

Samsung M378B1G73EB0-YK0 8GB

Kingston 99U5474-010.A00LF 2GB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB