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Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK16GX4M4B3600C18 4GB

Samsung M386B4G70DM0-CMA4 32GB vs Corsair CMK16GX4M4B3600C18 4GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Corsair CMK16GX4M4B3600C18 4GB

Corsair CMK16GX4M4B3600C18 4GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Corsair CMK16GX4M4B3600C18 4GB 需要考虑的原因
Corsair CMK16GX4M4B3600C18 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 52
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK16GX4M4B3600C18 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 26
  • 读取速度，GB/s
    9.7 left arrow 16.0
  • 写入速度，GB/s
    7.2 left arrow 12.2
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 2793

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Corsair CMK16GX4M4B3600C18 4GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M386A8K40BMB-CPB 64GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMN16GX4M2Z3200C16 8GB
Corsair CMN16GX4M2Z3200C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C17-8GTZR 8GB
G Skill Intl F4-4266C17-8GTZR 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
内存RAM
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM