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Samsung M386B4G70DM0-CMA4 32GB
Essencore Limited KD48GU880-32N220T 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Essencore Limited KD48GU880-32N220T 8GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Essencore Limited KD48GU880-32N220T 8GB

Essencore Limited KD48GU880-32N220T 8GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Essencore Limited KD48GU880-32N220T 8GB 需要考虑的原因
Essencore Limited KD48GU880-32N220T 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 52
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    12.3 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 14900
    左右 1.72 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Essencore Limited KD48GU880-32N220T 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 47
  • 读取速度，GB/s
    9.7 left arrow 12.3
  • 写入速度，GB/s
    7.2 left arrow 12.7
  • 内存带宽，mbps
    14900 left arrow 25600
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 2887

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Essencore Limited KD48GU880-32N220T 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Corsair CMK64GX4M2Z4000C18 32GB
Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J641GU42J9266ND 8GB
Avant Technology J641GU42J9266ND 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMD16GX4M4A2666C15 4GB
Corsair CMD16GX4M4A2666C15 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
内存RAM