Samsung M386B4G70DM0-CMA4 32GB vs G Skill Intl F4-3000C16-16GSXKB 16GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

G Skill Intl F4-3000C16-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

45 52

左右 -16% 更低的延时
更快的读取速度，GB/s

16.6 9.7

测试中的平均数值
更快的写入速度，GB/s

11.7 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3000C16-16GSXKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 45
读取速度，GB/s

9.7 16.6
写入速度，GB/s

7.2 11.7
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology CT8G4DFS6266.M4FB 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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G Skill Intl F4-2400C16-4GFX 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

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