Samsung M386B4G70DM0-CMA4 32GB vs Mushkin MRB4U300GJJM16G 16GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Mushkin MRB4U300GJJM16G 16GB

Mushkin MRB4U300GJJM16G 16GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Mushkin MRB4U300GJJM16G 16GB

需要考虑的原因
Mushkin MRB4U300GJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 52

左右 -117% 更低的延时
更快的读取速度，GB/s

15.8 9.7

测试中的平均数值
更快的写入速度，GB/s

12.1 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Mushkin MRB4U300GJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 24
读取速度，GB/s

9.7 15.8
写入速度，GB/s

7.2 12.1
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMX8GX3M2A2000C9 4GB

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Crucial Technology CT8G4DFS824A.C8FHD1 8GB

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Kingston HP26D4S9S1ME-4 4GB

Kingston ACR16D3LS1KFG/4G 4GB

Kingston ACR16D3LS1KFG/4G 4GB

Samsung M471B5273CH0-CH9 4GB

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Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

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Samsung M471A5244CB0-CWE 4GB

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Crucial Technology BL16G32C16S4B.8FB 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB