Samsung M386B4G70DM0-CMA4 32GB vs Teikon TMA851S6AFR6N-UHHC 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

更快的写入速度，GB/s

7.2 6.6

测试中的平均数值

Teikon TMA851S6AFR6N-UHHC 4GB

需要考虑的原因
Teikon TMA851S6AFR6N-UHHC 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的读取速度，GB/s

13.5 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Teikon TMA851S6AFR6N-UHHC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

9.7 13.5
写入速度，GB/s

7.2 6.6
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 1338

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2133C15S4/8G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Corsair CMD16GX4M4B2133C10 4GB

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Samsung M4 70T5663QZ3-CF7 2GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Crucial Technology BLS8G4D240FSCK.8FBD 8GB

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G Skill Intl F4-2800C15-8GTZB 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-3333C16-4GRKD 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB