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Samsung M4 70T5663QZ3-CF7 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
比较
Samsung M4 70T5663QZ3-CF7 2GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
总分
Samsung M4 70T5663QZ3-CF7 2GB
总分
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
18
测试中的平均数值
需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
64
左右 -137% 更低的延时
更快的写入速度,GB/s
15.1
1,869.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663QZ3-CF7 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
27
读取速度,GB/s
4,477.7
18.0
写入速度,GB/s
1,869.1
15.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
697
3711
Samsung M4 70T5663QZ3-CF7 2GB RAM的比较
Samsung M4 70T5663RZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965516-112.A00LF 16GB
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SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3600C16-8GTESC 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
报告一个错误
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Bug description
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