Samsung M386B4G70DM0-CMA4 32GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 -93% 更低的延时
更快的读取速度，GB/s

18.7 9.7

测试中的平均数值
更快的写入速度，GB/s

17.8 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 27
读取速度，GB/s

9.7 18.7
写入速度，GB/s

7.2 17.8
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2173 3963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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SK Hynix HMA82GS6DJR8N-VK 16GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3200C14-8GTZRX 8GB

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G Skill Intl F4-3333C16-4GRKD 4GB

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Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

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Samsung M378B5673FH0-CH9 2GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-3600C16-8GTZSW 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB