Samsung M386B4G70DM0-CMA4 32GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

低于PassMark测试中的延时，ns

52 74

左右 30% 更低的延时

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

报告一个错误

更快的读取速度，GB/s

13.6 9.7

测试中的平均数值
更快的写入速度，GB/s

7.7 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 74
读取速度，GB/s

9.7 13.6
写入速度，GB/s

7.2 7.7
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2173 1616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS832A.M8FR 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CM3B4G2C1600L9 4GB

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G Skill Intl F4-2666C16-4GRB 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology BLM8G44C19U4B.M8FE1 8GB

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AMD R5S38G1601U2S 8GB

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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

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Kingston 9965525-140.A00LF 8GB

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Smart Modular SF4641G8CKHI6DFSDS 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Kingston KHX3733C19D4/8GX 8GB

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Kingston 9905622-024.A00G 4GB

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