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Samsung M391A1K43BB1-CRC 8GB
AMD R9S48G3206U2S 8GB

Samsung M391A1K43BB1-CRC 8GB vs AMD R9S48G3206U2S 8GB

总分
star star star star star
Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

总分
star star star star star
AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

差异 规格 评论

差异

Samsung M391A1K43BB1-CRC 8GB 需要考虑的原因
Samsung M391A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 30% 更低的延时
AMD R9S48G3206U2S 8GB 需要考虑的原因
AMD R9S48G3206U2S 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.6 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 5.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M391A1K43BB1-CRC 8GB
AMD R9S48G3206U2S 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 37
  • 读取速度，GB/s
    12.0 left arrow 20.6
  • 写入速度，GB/s
    5.5 left arrow 13.9
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1925 left arrow 3518

Samsung M391A1K43BB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

AMD R9S48G3206U2S 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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