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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT8G4DFD824A.C16FBD2 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Crucial Technology CT8G4DFD824A.C16FBD2 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 16.7
  • 写入速度，GB/s
    6.8 left arrow 10.4
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2962

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Neo Forza NMUD480E82-3600 8GB
Neo Forza NMUD480E82-3600 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM