Samsung M391B5273CH0-CH9 4GB vs Corsair CMD64GX4M8B2800C14 8GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

Corsair CMD64GX4M8B2800C14 8GB

Corsair CMD64GX4M8B2800C14 8GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

Corsair CMD64GX4M8B2800C14 8GB

需要考虑的原因
Corsair CMD64GX4M8B2800C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.4 13.4

测试中的平均数值
更快的写入速度，GB/s

11.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

Corsair CMD64GX4M8B2800C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.4 14.4
写入速度，GB/s

8.4 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2275 3078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Kingston 99U5403-036.A00G 4GB

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G Skill Intl F4-4600C19-8GTZSWC 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Crucial Technology CT4G4DFS8213.C8FAR11 4GB