Samsung M391B5673EH1-CH9 2GB vs Corsair CMD16GX4M4B2133C10 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Corsair CMD16GX4M4B2133C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2133C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

15.8 12.8

测试中的平均数值
更快的写入速度，GB/s

11.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B2133C10 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

12.8 15.8
写入速度，GB/s

9.0 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Micron Technology 4ATF51264AZ-2G3E1 4GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMK32GX4M4D3600C18 8GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMK32GX4M2A2400C14 16GB

Corsair CMK32GX4M2A2400C14 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB