Samsung M391B5673EH1-CH9 2GB vs Corsair CMD16GX4M4B3600C18 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Corsair CMD16GX4M4B3600C18 4GB

需要考虑的原因
Corsair CMD16GX4M4B3600C18 4GB

报告一个错误

更快的读取速度，GB/s

16.6 12.8

测试中的平均数值
更快的写入速度，GB/s

12.3 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B3600C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

12.8 16.6
写入速度，GB/s

9.0 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3279

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix DDR2 800 2G 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Corsair CM4X16GE2133C15S2 16GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Kingston CBD24D4S7D8MA-16 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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G Skill Intl F4-3200C14-16GTZ 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT16G4SFD8266.C16FN 16GB

Samsung M378A1G43DB0-CPB 8GB

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Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB