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SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology CT16G4DFRA32A.C8FE 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.2
    测试中的平均数值
Crucial Technology CT16G4DFRA32A.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA32A.C8FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 77
    左右 -166% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 29
  • 读取速度，GB/s
    2,936.9 left arrow 17.2
  • 写入速度，GB/s
    1,884.0 left arrow 13.9
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3503

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-2133C15-8GNT 8GB
G Skill Intl F4-2133C15-8GNT 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9905622-058.A00G 8GB
Kingston 9905622-058.A00G 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK32GX4M4Z3200C16 8GB
Corsair CMK32GX4M4Z3200C16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
Kingston KF3200C20S4/16G 16GB
Kingston KF3200C20S4/16G 16GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905702-008.A00G 8GB
Kingston 9905702-008.A00G 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM